PMID: 11328029May 1, 2001Paper

Subsurface dimerization in III-V semiconductor (001) surfaces

Physical Review Letters
C KumpfR L Johnson

Abstract

We present the atomic structure of the c(8 x 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group III atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 x 2) reconstructions of III-V semiconductors can be described in a unified model.

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Citations

Mar 10, 2011·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Dawid TotonMarek Szymonski
Sep 28, 2010·Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry·Jakub S Prauzner-BechcickiMarek Szymonski
Dec 22, 2012·Chemical Society Reviews·Shelley A ClaridgePaul S Weiss
May 28, 2009·Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry·Szymon GodlewskiMarek Szymonski
Apr 4, 2007·Nanotechnology·J J KolodziejM Szymonski
Jan 6, 2018·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Karim ShamoutCarsten Westphal
Sep 6, 2014·Journal of Physics. Condensed Matter : an Institute of Physics Journal·C W BurrowsG R Bell
Feb 9, 2005·Physical Review Letters·Akihiro OhtakeNobuyuki Koguchi
Dec 18, 2002·Physical Review Letters·Seung Mi LeeMatthias Scheffler

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