Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability

ACS Applied Materials & Interfaces
Weiming LvZhongyuan Liu

Abstract

Black phosphorus (BP) has drawn great attention owing to its tunable band gap depending on thickness, high mobility, and large Ion/ Ioff ratio, which makes BP attractive for using in future two-dimensional electronic and optoelectronic devices. However, its instability under ambient conditions poses challenge to the research and limits its practical applications. In this work, we present a feasible approach to suppress the degradation of BP by sulfur (S) doping. The fabricated S-doped BP few-layer field-effect transistors (FETs) show more stable transistor performance under ambient conditions. After exposing to air for 21 days, the charge-carrier mobility of a representative S-doped BP FETs device decreases from 607 to 470 cm2 V-1 s-1 (remained as high as 77.4%) under ambient conditions and a large Ion/ Ioff ratio of ∼103 is still retained. The atomic force microscopy analysis, including surface morphology, thickness, and roughness, also indicates the lower degradation rate of S-doped BP compared to BP. First-principles calculations show that the dopant S atom energetically prefers to chemisorb on the BP surface in a dangling form and the enhanced stability of S-doped BP can be ascribed to the downshift of the conduction band m...Continue Reading

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Citations

Jan 9, 2020·Research : a Science Partner Journal·Wenhan ZhouHaibo Zeng
Apr 23, 2020·Nanotechnology·Ying YuYewu Wang
Oct 28, 2020·Dalton Transactions : an International Journal of Inorganic Chemistry·Andrea IencoGabriele Manca
Jul 12, 2020·Journal of Hazardous Materials·T KaewmarayaT Hussain
Jul 24, 2020·ACS Applied Materials & Interfaces·Yu-Ling HsiehChing-Yuan Su
Aug 28, 2021·The Journal of Physical Chemistry Letters·Bo WangGuochun Yang

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