Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering

Journal of Physics. Condensed Matter : an Institute of Physics Journal
R GagoF J Palomares

Abstract

The surface morphology of molybdenum silicide (Mo x Si1-x ) films has been studied after low-energy Ar+ ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si1-x films with compositions below, equal and above the MoSi2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si1-x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si1-x . Contrary to silicon, Mo x Si1-x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a ...Continue Reading

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Citations

Sep 11, 2019·Physical Review. E·Kevin M Loew, R Mark Bradley
Oct 5, 2018·Journal of Physics. Condensed Matter : an Institute of Physics Journal·J Muñoz-GarcíaA Redondo-Cubero

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