Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection

Optics Express
Thach PhamShui-Qing Yu

Abstract

Normal-incidence Ge1-xSnx photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge1-xSnx/Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 10(9) cmHz(1/2)W(-1) at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

Citations

Mar 16, 2018·Optics Letters·Bo-Jun HuangGuo-En Chang
Jun 30, 2019·Optics Express·Xiangquan LiuBuwen Cheng
Dec 13, 2016·Scientific Reports·Zhi LiuQiming Wang
Feb 13, 2021·Optics Letters·Cheng-Hsun TsaiGuo-En Chang
Apr 7, 2021·Optics Express·Hao ZhouChuan Seng Tan
Apr 16, 2020·Nano Letters·Yuekun YangZengfeng Di

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