Tailoring spin defects in diamond by lattice charging

Nature Communications
Felipe Fávaro de OliveiraJ Wrachtrup

Abstract

Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems.

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Citations

Aug 28, 2019·Nature Protocols·Dominik B BucherRonald L Walsworth
Nov 9, 2019·Physical Review Letters·Dolev BluvsteinAnia C Bleszynski Jayich
Apr 25, 2018·Sensors·Jean-Philippe TetienneLloyd C L Hollenberg
Aug 30, 2019·Nature Communications·E D HerbschlebN Mizuochi
Jun 15, 2019·Nature Communications·Moriyoshi HaruyamaOsamu Hanaizumi
Aug 17, 2020·Physical Review Letters·Sunil UpadhyayJonathan D Weinstein
Nov 2, 2019·Nature Communications·Tobias LühmannSébastien Pezzagna
Dec 31, 2020·Scientific Reports·Christoph FindlerFedor Jelezko
Sep 6, 2017·Nano Letters·Matthias PfenderJörg Wrachtrup
Feb 13, 2020·Chemical Reviews·Michael N R AshfoldChloe V Peaker

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Methods Mentioned

BETA
confocal microscopy
atomic force microscopy

Software Mentioned

SILVACO

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