Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics

Optics Express
G LheureuxS P DenBaars

Abstract

We theoretically and experimentally investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with a thickness (55 nm from simulation) that is optimized to guarantee a low reflectivity at the resonance was deposited on nanoporous GaN DBRs fabricated using electrochemical (EC) etching on freestanding semipolar (2021¯) GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The experimental results indicate the presence of a TP mode at ∼ 454 nm on the structure after the Ag deposition, which is also supported by theoretical calculations using a transfer-matrix algorithm. The results from mode dispersion with energy-momentum reflectance spectroscopy measurements also support the presence of a TP mode at the metal-nanoporous GaN DBR interface. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (∼ 4-7 nm shift when changing the ambient within the pores from air with n = 1 to isopropanol n = 1.3), suggesting an application of the...Continue Reading

References

Mar 5, 2013·Nature Nanotechnology·Jon A SchullerRashid Zia
Jun 20, 2013·Nano Letters·C SymondsJ Bellessa
May 8, 2015·ACS Photonics·Kevin M McPeakDavid J Norris
Jun 22, 2017·Scientific Reports·C SymondsJ Bellessa
Sep 13, 2019·Optics Express·Ryan AndersonSteven DenBaars

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Citations

Jun 3, 2021·Materials·Meng-Ying LinKuo-Ping Chen

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