The intrinsic origin of hysteresis in MoS2 field effect transistors

Nanoscale
Jiapei ShuQing Chen

Abstract

We investigate the hysteresis and gate voltage stress effect in MoS2 field effect transistors (FETs). We observe that both the suspended and the SiO2-supported FETs have large hysteresis in their transfer curves under vacuum which cannot be attributed to the traps at the interface between the MoS2 and the SiO2 or in the SiO2 substrate or the gas adsorption/desorption effect. Our findings indicate that the hysteresis we observe comes from the MoS2 itself, revealing an intrinsic origin of the hysteresis besides some extrinsic factors. The fact that the FETs based on thinner MoS2 have larger hysteresis than that with thicker MoS2 suggests that the surface of MoS2 plays a key role in the hysteresis. The gate voltage sweep range, sweep direction, sweep time and loading history all affect the hysteresis observed in the transfer curves.

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Citations

May 26, 2016·Physical Chemistry Chemical Physics : PCCP·Wei WeiBaibiao Huang
Jul 18, 2018·Advanced Materials·Bhagwati PrasadJochen Mannhart
May 20, 2020·Nanotechnology·A Di BartolomeoF Giubileo
Feb 9, 2021·ACS Applied Materials & Interfaces·Himani JawaSaurabh Lodha
Mar 5, 2021·Nature·Yuan LiuXiangfeng Duan
Jun 3, 2021·Micromachines·Carlos MarquezFrancisco Gamiz
Jun 10, 2021·Advanced Materials·Lei YinJun He
Jul 23, 2021·Nanotechnology·Sooraj SanjayNavakanta Bhat
Dec 18, 2020·ACS Applied Materials & Interfaces·Hongzhi ShenDehui Li
Jul 3, 2020·ACS Applied Materials & Interfaces·Xiao ZouWing-Man Tang
Sep 22, 2020·ACS Applied Materials & Interfaces·Arvind Shankar KumarXuan P A Gao
May 12, 2020·ACS Applied Materials & Interfaces·Bin TangQing Chen
Sep 21, 2021·ACS Applied Materials & Interfaces·Amin AbnaviMichael M Adachi

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