Thermal Rectification in Asymmetric Graphene/Hexagonal Boron Nitride van der Waals Heterostructures

ACS Applied Materials & Interfaces
Xue-Kun ChenKe-Qiu Chen

Abstract

Graphene/hexagonal boron nitride (h-BN) heterostructures assembled by van der Waals (vdW) interactions show numerous unique physical properties such as quantum Hall effects and exotic correlated states, which have promising potential applications in the design of novel electronic devices. Understanding thermal transport in such junctions is critical to control the performance and stability of prospective nanodevices. In this work, using nonequilibrium molecular dynamics simulations, we systematically investigate the thermal transport in asymmetric graphene/h-BN vdW heterostructures. It is found that the heat prefers to flow from the monolayer to the multilayer regions, resulting in a significant thermal rectification (TR) effect. To determine the optimum conditions for TR, the influences of sample length, defect density, asymmetric degree, ambient temperature, and vdW interaction strength are studied. Particularly, we found that the TR ratio could be improved by about 1 order of magnitude via increasing the coupling strength from 1 to 10, which clearly distinguishes from the commonly held notion that the TR ratio is practically insensitive or even decreasing with the interaction strength. Detailed spectral analysis reveals that...Continue Reading

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Dec 5, 2019·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Xue-Kun Chen, Ke-Qiu Chen

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Citations

Jun 26, 2020·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Dengke Ma, Lifa Zhang
Jan 12, 2021·Physical Chemistry Chemical Physics : PCCP·Yingyan ZhangQing-Xia Pei
Apr 30, 2021·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Dengke MaLifa Zhang

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