Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Reza AbdolvandFarrokh Ayazi

Abstract

This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators. Low-motional-impedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array. Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed. Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient. The lowest reported power consumption is approximately 350 microW for an oscillator operating at approximately 106 MHz. A passive temperature compensation method is also utilized by including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-2.4 ppm/ degrees C) temperature coefficient of frequency is obtained for an 82-MHz oscillator.

References

Jan 18, 2007·IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control·Ventsislav Yantchev, Ilia Katardjiev

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Citations

Oct 27, 2015·Sensors·Wen-Ming ZhangGuang Meng
Apr 13, 2012·Advanced Materials·Chih-Ming LinAlbert P Pisano
Jan 15, 2015·IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control·Arashk Norouzpour-ShiraziFarrokh Ayazi
May 13, 2015·IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control·Hossein Miri LavasaniFarrokh Ayazi
Apr 10, 2010·IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control·Ventsislav Yantchev
Sep 8, 2016·Micromachines·Reza AbdolvandFrederic Nabki

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