Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks

ACS Nano
Yudan ZhaoShoushan Fan

Abstract

We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices.

References

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Citations

Feb 2, 2017·Scientific Reports·Bongjun KimAnanth Dodabalapur
Aug 12, 2016·Physical Chemistry Chemical Physics : PCCP·Tengying MaZhongmin Su
Jul 18, 2017·Advanced Materials·Artem G ShulgaMaria A Loi
Nov 20, 2016·Advanced Materials·Jian Zhu, Mark C Hersam
Dec 1, 2016·ChemPlusChem·James E Ellis, Alexander Star
Oct 31, 2021·Proceedings of the National Academy of Sciences of the United States of America·Yao YaoAntonio Facchetti

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