Three-dimensional IR imaging with uncooled GaN photodiodes using nondegenerate two-photon absorption

Optics Express
Himansu S PattanaikEric W Van Stryland

Abstract

We utilize the recently demonstrated orders of magnitude enhancement of extremely nondegenerate two-photon absorption in direct-gap semiconductor photodiodes to perform scanned imaging of three-dimensional (3D) structures using IR femtosecond illumination pulses (1.6 µm and 4.93 µm) gated on the GaN detector by sub-gap, femtosecond pulses. While transverse resolution is limited by the usual imaging criteria, the longitudinal or depth resolution can be less than a wavelength, dependent on the pulsewidths in this nonlinear interaction within the detector element. The imaging system can accommodate a wide range of wavelengths in the mid-IR and near-IR without the need to modify the detection and imaging systems.

References

Jul 21, 2004·Optics Letters·Marius A Albota, Franco N C Wong
Jan 1, 2008·The Review of Scientific Instruments·Christopher S ColleyJohn W Cockburn
Jan 12, 2004·Optics Express·Bujin GuoA Cho
Aug 22, 2005·Optics Express·Yi WangHan Le
Oct 1, 1985·Optics Letters·E W Van StrylandM J Soileau
Nov 24, 2011·Optics Express·Claudiu M CirloganuEric W Van Stryland
Jun 22, 2013·Optics Express·Guo-Liang ShentuJian-Wei Pan
Oct 10, 2013·Optics Express·Paulina S KuoXiao Tang

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Citations

Aug 27, 2016·Physical Review Letters·Matthew ReichertEric W Van Stryland
Jul 25, 2020·Light, Science & Applications·David KnezDmitry A Fishman
Nov 10, 2016·Optics Express·Peng ZhaoEric W Van Stryland
Jul 21, 2021·Light, Science & Applications·David KnezDmitry A Fishman

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