Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Optics Express
Jeroen GoyvaertsGunther Roelkens

Abstract

We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

References

Mar 14, 2013·Nature Communications·Cheng-Wei ChengDevendra K Sadana
May 29, 2018·Optics Express·Keye SunAndreas Beling
May 15, 2020·Optics Express·Qianhuan YuAndreas Beling

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Citations

Oct 30, 2020·Optics Express·Bahawal HaqGunther Roelkens

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