Transparent resistive switching memory using aluminum oxide on a flexible substrate

Nanotechnology
Seung-Won YeomByeong-Kwon Ju

Abstract

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

References

Nov 2, 2007·Nature Materials·Rainer Waser, Masakazu Aono
Oct 27, 2010·ACS Applied Materials & Interfaces·Duk Young Kim, Andrew J Steckl
Nov 22, 2011·Nanotechnology·M S KimK Y Suh

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Citations

Jan 10, 2019·ACS Applied Materials & Interfaces·Byeong Ryong LeeTae Geun Kim
Jan 25, 2020·ACS Applied Materials & Interfaces·Md Ataur RahmanMadhu Bhaskaran

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