Trap density probing on top-gate MoS₂ nanosheet field-effect transistors by photo-excited charge collection spectroscopy

Nanoscale
Kyunghee ChoiSeongil Im

Abstract

Two-dimensional (2D) molybdenum disulfide (MoS₂) field-effect transistors (FETs) have been extensively studied, but most of the FETs with gate insulators have displayed negative threshold voltage values, which indicates the presence of interfacial traps both shallow and deep in energy level. Despite such interface trap issues, reports on trap densities in MoS₂ are quite limited. Here, we probed top-gate MoS₂ FETs with two- (2L), three- (3L), and four-layer (4L) MoS₂/dielectric interfaces to quantify deep-level interface trap densities by photo-excited charge collection spectroscopy (PECCS), and reported the result that deep-level trap densities over 10(12) cm(-2) may exist in the interface and bulk MoS₂ near the interface. Transfer curve hysteresis and PECCS measurements show that shallow traps and deep traps are not that different in density order from each other. We conclude that our PECCS analysis distinguishably provides valuable information on deep level interface/bulk trap densities in 2D-based FETs.

References

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Citations

May 25, 2016·ACS Nano·Martha I SernaManuel A Quevedo-Lopez
Jun 27, 2017·ACS Applied Materials & Interfaces·Peng ZhaoChadwin D Young
Mar 1, 2017·Beilstein Journal of Nanotechnology·Filippo GiannazzoFabrizio Roccaforte
Aug 19, 2017·Science Advances·Michal J MleczkoEric Pop
Feb 19, 2021·Nature Communications·Xiaowei WangZheng Liu
Feb 15, 2019·ACS Applied Materials & Interfaces·Mohan Kumar GhimireSeong Chu Lim
Sep 19, 2019·ACS Applied Materials & Interfaces·Tsung-Han TsaiPo-Wen Chiu
Sep 4, 2019·ACS Applied Materials & Interfaces·Binjie HuangJohn T L Thong
Sep 13, 2019·Nano Letters·Achint JainLukas Novotny
Dec 22, 2016·ACS Applied Materials & Interfaces·Abhishek S DahiyaDaniel Alquier

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