Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory

Micromachines
Lei Li

Abstract

Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO) sandwiched structure can be tuned in a controllable manner. An investigation was made on the memristic performance mechanism regarding GO charge-trap memory; these blends were further characterized by transmission electron microscope (TEM), scanning electron microscope (SEM), Fourier transform infrared spectra (FTIR), Raman spectra, thermogravimetric analysis, X-ray diffraction (XRD), ultraviolet-visible spectroscopy, and fluorescence spectra in particular. Dependent on the GO content, the resistive switching was originated from the charges trapped in GO, for which bipolar tunable memristic behaviors were observed. PMMA:GO composites possess an ideal capability for large area device applications with the benefits of superior electronic properties and easy chemical modification.

References

Jan 14, 2011·Chemical Society Reviews·Clément SanchezLionel Nicole
Nov 15, 2011·Chemical Communications : Chem Comm·An-Dih YuWen-Chang Chen
Aug 15, 2012·ACS Nano·Sung Min KimKang L Wang
Feb 6, 2014·Advanced Materials·Xiaomu WangJian-Bin Xu
Feb 14, 2014·Chemical Communications : Chem Comm·Ying-Hsuan ChouWen-Chang Chen
Oct 4, 2014·Nanoscale Research Letters·Jagan Singh MeenaTseung-Yuen Tseng

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Citations

Apr 15, 2020·Science and Technology of Advanced Materials·Muhammad Muqeet RehmanNisar Ahmed

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