Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth

Advanced Materials
Bernhard LoitschG Koblmüller

Abstract

A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub-10 nm regime. While this scheme preserves the bulk-like crystal properties, correlated optical experiments reveal huge blueshifted photo-luminescence (up to ≈100 meV) with decreasing nanowire cross-section, demonstrating very strong quantum confinement effects.

References

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Citations

Dec 18, 2015·Nano Letters·Johannes K ZettlerSergio Fernandez-Garrido
Oct 13, 2015·Nano Letters·Bernhard LoitschJonathan J Finley
Aug 19, 2015·ACS Nano·Zai-Xing YangJohnny C Ho
Mar 24, 2016·Nano Letters·Neimantas VainoriusMats-Erik Pistol
Mar 22, 2016·Nano Letters·Alexander KelrichDan Ritter
Jan 21, 2017·Scientific Reports·Yonatan CalahorraDan Ritter
Nov 22, 2018·Advanced Materials·Pierre CorfdirVladimir M Fomin
Apr 18, 2019·Nanotechnology·Adrian Díaz ÁlvarezBruno Grandidier
Oct 17, 2019·Nanotechnology·Igor IlkivAlexey Bouravleuv
Dec 23, 2016·Nanotechnology·Heidi PottsAnna Fontcuberta I Morral
Sep 24, 2020·Light, Science & Applications·Xiaoxiao SunXinqiang Wang
Apr 5, 2019·Nanotechnology·Martin BjergfeltJesper Nygård
Dec 20, 2017·Nano Letters·Wonjong KimAnna Fontcuberta I Morral

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