Ultra-compact III‒V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s

Optics Express
D FitsiosFabrice Raineri

Abstract

We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650 nm × 285 nm InP-based wire waveguide evanescently coupled to 500 nm × 220 nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2 μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4 fJ/bit switching energies and <50 ps response times. Bit-level SR-FF memory operation was evaluated at 5 Gb/s with PRBS-resembling data patterns, revealing error free operation with a negative power penalty.

Citations

Jun 9, 2020·Light, Science & Applications·Theoni AlexoudiNikos Pleros
Sep 11, 2020·Optics Express·Mir Hamid Rezaei, Abbas Zarifkar
Apr 4, 2018·Optics Express·George Mourgias-AlexandrisNikos Pleros
May 26, 2021·Light, Science & Applications·Theoni AlexoudiNikos Pleros

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