Ultrafast and low temperature synthesis of highly crystalline and patternable few-layers tungsten diselenide by laser irradiation assisted selenization process

ACS Nano
Yu-Ze ChenYu-Lun Chueh

Abstract

Recently, a few attempts to synthesize monolayers of transition metal dichalcogenides (TMDs) using the chemical vapor deposition (CVD) process had been demonstrated. However, the development of alternative processes to synthesize TMDs is an important step because of the time-consuming, required transfer and low thermal efficiency of the CVD process. Here, we demonstrate a method to achieve few-layers WSe2 on an insulator via laser irradiation assisted selenization (LIAS) process directly, for which the amorphous WO3 film undergoes a reduction process in the presence of selenium gaseous vapors to form WSe2, utilizing laser annealing as a heating source. Detailed growth parameters such as laser power and laser irradiation time were investigated. In addition, microstructures, optical and electrical properties were investigated. Furthermore, a patternable WSe2 concept was demonstrated by patterning the WO3 film followed by the laser irradiation. By combining the patternable process, the transfer-free WSe2 back gate field effect transistor (FET) devices are realized on 300 nm-thick SiO2/P(+)Si substrate with extracted field effect mobility of ∼0.2 cm(2) V(-1) s(-1). Similarly, the reduction process by the laser irradiation can be al...Continue Reading

References

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Sep 10, 2014·ACS Applied Materials & Interfaces·Tamie A J Loh, Daniel H C Chua

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Citations

Oct 12, 2016·Chemical Communications : Chem Comm·H Van BuiJ R van Ommen
Mar 6, 2021·Scientific Reports·Omar Adnan AbbasSakellaris Mailis
Jan 9, 2018·ACS Applied Materials & Interfaces·Wei-Sheng LinYu-Lun Chueh
Jan 24, 2018·ACS Nano·Yu-Chuan LinJoshua A Robinson

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