Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors

doi:10.1039/c6nr01040g

PMID: 27240692DOI: 10.1039/c6nr01040gJun 1, 2016Paper

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors

Nanoscale

Ngoc Huynh VanDae Joon Kang

Abstract

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

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Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors

Abstract

References

Functional nanoscale electronic devices assembled using silicon nanowire building blocks

Ge/Si nanowire heterostructures as high-performance field-effect transistors

ZnO nanowire transistors

Single p-type/intrinsic/n-type silicon nanowires as nanoscale avalanche photodetectors

Complementary symmetry silicon nanowire logic: power-efficient inverters with gain

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors

Single and tandem axial p-i-n nanowire photovoltaic devices

Ferroelectric transistors with nanowire channel: toward nonvolatile memory applications

Enhancement-mode silicon nanowire field-effect transistors on plastic substrates

Tuning of operation mode of ZnO nanowire field effect transistors by solvent-driven surface treatment

Nanowire transistors without junctions.

Nanowire transistors made easy

Graphene transistors.

Highly end-doped silicon nanowires for field-effect transistors on flexible substrates

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Graphene electronics: thinking outside the silicon box

Carbon nanotube field effect transistors with suspended graphene gates

Kinked p-n junction nanowire probes for high spatial resolution sensing and intracellular recording.

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Single InAs/GaSb nanowire low-power CMOS inverter

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

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