Ultrasensitive, Low-Power Oxide Transistor-Based Mechanotransducer with Microstructured, Deformable Ionic Dielectrics

ACS Applied Materials & Interfaces
Sukjin JangJang-Yeon Kwon

Abstract

The development of a highly sensitive artificial mechanotransducer that mimics the tactile sensing features of human skin has been a big challenge in electronic skin research. Here, we demonstrate an ultrasensitive, low-power oxide transistor-based mechanotransducer modulated by microstructured, deformable ionic dielectrics, which is consistently sensitive to a wide range of pressures from 1 to 50 kPa. To this end, we designed a viscoporoelastic and ionic thermoplastic polyurethane (i-TPU) with micropyramidal feature as a pressure-sensitive gate dielectric for the indium-gallium-zinc-oxide (IGZO) transistor-based mechanotransducer, which leads to an unprecedented sensitivity of 43.6 kPa-1, which is 23 times higher than that of a capacitive mechanotransducer. This is because the pressure-induced ion accumulation at the interface of the i-TPU dielectric and IGZO semiconductor effectively modulates the conducting channel, which contributed to the enhanced current level under pressure. We believe that the ionic transistor-type mechanotransducer suggested by us will be an effective way to perceive external tactile stimuli over a wide pressure range even under low power (<4 V), which might be one of the candidates to directly emulate...Continue Reading

References

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Citations

Jan 14, 2019·Journal of Materials Chemistry. B, Materials for Biology and Medicine·Zhong MaYi Shi
Nov 21, 2019·ACS Applied Materials & Interfaces·Myungwoo SonMoon-Ho Ham

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