Unconventional resistive switching behavior in ferroelectric tunnel junctions

Physical Chemistry Chemical Physics : PCCP
H J MaoFeng Pan

Abstract

We investigate an unconventional resistive switching (RS) behavior in La0.67Sr0.33MnO3/BaTiO3/metal (LSMO/BTO) ferroelectric tunnel junctions (FTJs), which is dominated by the variation of the barrier potential profile modulated by the migration of oxygen vacancies in the p-LSMO/n-BTO junction. The LSMO/BTO/Co junction exhibits a remarkable self-rectifying effect ascribed to the high-density interface state at the BTO/Co interface, in contrast to the symmetric conductivity when the top metal electrode is inert Pt. The effects of ferroelectric polarization on the RS behavior are also emphasized. Our work builds a bridge between FTJs and resistive random access memory devices.

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Citations

Sep 29, 2015·Advanced Materials·Bin CuiFeng Pan
Aug 1, 1957·Archives of Biochemistry and Biophysics·L B NANNINGA
Nov 18, 2015·Journal of Chemical Theory and Computation·Pengfei LiKenneth M Merz
Sep 16, 2016·Nano Letters·Alexandra Palacio-MoralesRoland Wiesendanger
Jan 26, 2018·ACS Applied Materials & Interfaces·Zhongnan XiZheng Wen

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