Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

Angewandte Chemie
Jin ZhangSheng Meng

Abstract

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch-Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch-Grüneisen temperature is nearly fixed at 100 K. This work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.

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Citations

Jun 18, 2019·Advanced Materials·Sheng-Yi XieXian-Bin Li
Sep 26, 2020·Physical Review Letters·Chao LianSheng Meng
Aug 14, 2019·Nanoscale·Longjuan KongKehui Wu

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