Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

Nanotechnology
Victor-Tapio Rangel-KuoppaPeter Werner

Abstract

A set of Si1-x Sn x /Si(001) quantum wells (QWs) is grown by applying molecular beam epitaxy. The activation energies of holes in these QWs are studied by deep-level transient spectroscopy. It is observed that the holes activation energies increase monotonically with the Sn fraction (x). The valence band offset between pseudomorphic Si1-x Sn x and Si obeys the dependence ΔE(v) = 1.69x eV, while the offset between the average valence bands of unstrained Si1-x Sn x /Si heterojunction was deduced and obeys the dependence ΔE(v(av)) = 1.27x eV.

References

Apr 15, 1988·Physical Review. B, Condensed Matter·M Jaros
Jan 15, 1989·Physical Review. B, Condensed Matter· Van de Walle CG
Nov 15, 1994·Physical Review. B, Condensed Matter·T FromherzG Abstreiter
Apr 8, 2010·The Review of Scientific Instruments·Victor-Tapio Rangel-Kuoppa, Gang Chen

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Citations

Dec 9, 2017·Nanotechnology·L SchefflerB Julsgaard

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