Wafer-scale synthesis of single-crystal zigzag silicon nanowire arrays with controlled turning angles

Nano Letters
Huan ChenShuit-Tong Lee

Abstract

Silicon nanowires (SiNWs) having curved structures may have unique advantages in device fabrication. However, no methods are available to prepare curved SiNWs controllably. In this work, we report the preparation of three types of single-crystal SiNWs with various turning angles via metal-assisted chemical etching using (111)-oriented silicon wafers near room temperature. The zigzag SiNWs are single crystals and can be p- or n-doped using corresponding Si wafer as substrate. The controlled growth direction is attributed to the preferred movement of Ag nanoparticles along 001 and other directions in Si wafer. Our results demonstrate that metal-assisted chemical etching may be a viable approach to fabricate SiNWs with desired turning angles by utilizing the various crystalline directions in a Si wafer.

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Citations

Sep 3, 2011·ACS Applied Materials & Interfaces·Bechelany MikhaelPhilippe Laetitia
Apr 30, 2011·Nano Letters·Konrad RykaczewskiJohn Henry J Scott
Oct 20, 2011·Nano Letters·Wai-Keung ToZhifeng Huang
Sep 29, 2015·Langmuir : the ACS Journal of Surfaces and Colloids·Yinxiao Li, Chuanhua Duan
Mar 22, 2016·ACS Applied Materials & Interfaces·Brendan D SmithJeffrey C Grossman
Oct 13, 2015·Physical Chemistry Chemical Physics : PCCP·Jin-Wu Jiang
Jun 11, 2015·Nanoscale·Chang Quan LaiCarl V Thompson
Jan 20, 2016·Physical Chemistry Chemical Physics : PCCP·Jaehoon Kim, Jihun Oh
Oct 26, 2010·Nanotechnology·Z P HuangP Zhong
Sep 30, 2010·Nanotechnology·Su LiMin Gao
Apr 16, 2015·Nanotechnology·Junjun Liu, Zhifeng Huang
Apr 12, 2013·Nanotechnology·Jin-Wu JiangTimon Rabczuk
Feb 7, 2021·Nanomaterials·Antonio Alessio LeonardiAlessia Irrera
May 21, 2021·Advanced Materials·Ravi P Srivastava, Dahl-Young Khang
Oct 9, 2019·Nano Letters·Georgiana SanduSorin Melinte
Sep 19, 2017·ACS Applied Materials & Interfaces·Bingchang ZhangXiaohong Zhang

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